mitsubishi semiconductors M54566DP 7-unit 400ma darlington transistor array jul-2011 pin configuration description M54566DP is seven-circuit collector current sink type darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo > 50v) high-current driving (ic(max) = 400ma) active l-level input applications interfaces between microcomputers and high-voltage, high-current drive systems, driv es of relays and printers, and mos-bipolar logic ic interfaces. function the m54566 is produced by adding pnp transistors to m54522 inputs. seven circuits having active l-level inputs are provided. resistance of 8k is provided between each input and pnp transistor base. the input emitters are connected to v cc pin (pin 9). output transistor emitters are all connected to the gnd pin (pin 8). collector current is 400ma maximum. collector-emitter supply voltage is 50v maximum. these ics are optimal for drivers that are driven with n- mosic output and absorb collector current. package type 16p2x-b circuit diagram the seven circuits share the v cc and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit: ma 400 current per circuit output, l collector current i c v ?0.5 v cc input voltage v i ?55 + 125 storage temperature t stg ?20 + 75 operating temperature t opr w 1.00 ta = 25 , when mounted on board power dissipation p d v ?0.5 + 50 output , h collector-emitter voltage v ceo v 10 supply voltage v cc unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 ) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 o1 o2 o3 o4 o5 o6 o7 in1 in2 in3 in4 in5 in6 in7 gnd v cc output input v cc output input 8k 20k 3k gnd 2.7k 7.2k
mitsubishi semiconductors M54566DP 7-unit 400ma darlington transistor array jul-2011 2 v 50 0 output voltage v o duty cycle no more than 6% v v cc 3 0 ?l? input voltage v il v v cc v cc -0.2 ?h? input voltage v ih 200 0 duty cycle no more than 20% ma 350 0 collector current (current per 1 circuit when 7 circuits are coming on simultaneously) v cc =5v i c v 8 5 4 supply voltage v cc max typ min unit limits parameter symbol recommended operating conditions i c = 200ma i c = 350ma 10000 2000 v ce = 4v, v cc = 5v, i c = 350ma, ta = 25 dc amplification factor h fe ma 3.0 1.4 v cc = 5v, v i = v cc 3.5v supply current (one circuit coming on) i cc ma 0.58 0.3 v i = v cc 3.5v input current i i 1.6 0.9 v 2.2 1.1 v i = v cc 3v collector-emitter saturation voltage v ce(sat) v 50 i ceo = 100 a collector-emitter breakdown voltage v (br)ceo max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75 * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these valu es are obtained under any conditions. switching characteristics (unless otherwise noted, ta = 25 2500 turn off time t off 95 c l = 15pf note 1 turn on time t on max typ min unit limits test conditions parameter symbol note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l r l v o pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ,v i = 1 to 4v (2) input-output conditions : r l = 30 , v o = 10v, v cc = 4v (3) electrostatic capacity cl includes floating capacitance at connections and input capacitance at probes v cc
mitsubishi semiconductors M54566DP 7-unit 400ma darlington transistor array jul-2011 3 typical characteristics thermal derating factor characteristics ambient temperature ta( ) power dissipation p d (w) 0 25 50 75 100 0 0.5 1.0 1.5 2.0 M54566DP output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current i c (ma) duty-cycle-collector current characteristics duty cycle (%) collector current i c (ma) 0 20 60 80 100 0 100 200 300 500 40 400 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?vcc=5v ?ta = 75 duty cycle (%) collector current i c (ma) 0 20 60 80 100 0 100 200 300 500 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?vcc=5v ?ta = 25 40 400 duty-cycle-collector current characteristics dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor h fe 10 10 7 v cc =4v v ce =4v 5 3 2 3 10 2 4 7 5 3 2 10 7 5 3 2 3 10 2 7 5 3 2 10 1 collector current i c (ma) 0 0.5 1.0 1.5 2.0 0 100 200 300 400 ta=25 ta=-20 ta=75 v cc =4v v i =1v grounded emitter transfer characteristics supply voltage-input voltage v cc -v i (v) 0 0.4 0.8 1.2 1.6 0 100 200 300 400 ta=25 ta=-20 ta=75 v cc =4v v ce =4v ta=25 ta=-20 ta=75
mitsubishi semiconductors M54566DP 7-unit 400ma darlington transistor array jul-2011 4 input current i i( ma) supply current i cc (ma) input characteristics supply voltage-input voltage v cc -v i (v) 012 45 0 -0.2 -0.6 -0.8 -1.0 3 supply current characteristics supply voltage v cc (v) 024 810 0 1 2 4 5 6 ta=25 ta=-20 ta=75 v i =0v 3 v cc =8v -0.4 ta=25 ta=-20 ta=75
mitsubishi semiconductors M54566DP 7-unit 400ma darlington transistor array jul-2011 5 package outline preliminary
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